Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
A semiconductor device may include a silicide gate electrode that is disposed over a substrate, a first epitaxial pattern that protrudes from the substrate, a second epitaxial pattern that protrudes from the substrate, a silicide source contact that is connected to the substrate through the first epitaxial pattern and that is disposed at a level different from a level of the silicide gate electrode, and a silicide drain contact that is connected to the substrate through the second epitaxial pattern and that is disposed at a level different from the level of the silicide gate electrode.
Claims15
A method of manufacturing a semiconductor device, comprising:
- forming a sacrificial pattern on a substrate;
- growing a first epitaxial pattern to protrude from the substrate;
- growing a second epitaxial pattern to protrude from the substrate;
- forming a silicide gate electrode by siliciding the sacrificial pattern;
- forming a silicide source contact, that is disposed at a first level different from a top level of the silicide gate electrode, by siliciding the first epitaxial pattern;
- and
- forming a silicide drain contact, that is disposed at a second level different from the top level of the silicide gate electrode, by siliciding the second epitaxial pattern.
A method of manufacturing a semiconductor device, comprising:
- forming, over a substrate, a gate pattern comprising a sacrificial pattern and a hard mask pattern;
- forming a spacer on a sidewall of the gate pattern;
- growing a first epitaxial pattern to protrude from the substrate;
- growing a second epitaxial pattern to protrude from the substrate;
- exposing the sacrificial pattern by removing the hard mask pattern;
- and
- substituting the sacrificial pattern with a silicide gate electrode.
Dependencies are inferred from the claim text.