Crystalline oxide thin film, laminate, and thin-film transistor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsEmi KAWASHIMA, Yuki TSURUMA, Daichi SASAKI, Koji YAMAGUCHI, Nobuhiro IWASE
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Abstract
A crystalline oxide thin film including In as a main component, wherein the crystalline oxide thin film includes a low-resistance region A and a high-resistance region B that have different spread resistance values measured with a scanning spread resistance microscope (SSRM) in a plane direction thereof, and the spread resistance value of the high-resistance region B is 8 times or more as large as the spread resistance value of the low-resistance region A.
Claims33
A crystalline oxide thin film, comprising In as a main component,
- wherein the crystalline oxide thin film comprises a low-resistance region A and a high-resistance region B that have different spread resistance values measured with a scanning spread resistance microscope (SSRM) in a plane direction thereof,
- the spread resistance value of the high-resistance region B is 8 times or more as large as the spread resistance value of the low-resistance region A, and
- in a dC/dV value measured with a scanning capacitance microscope (SCM), a dC/dV value at a boundary between the low-resistance region A and the high-resistance region B is larger than a dC/dV value in the high-resistance region B.
(canceled)
A crystalline oxide thin film, comprising In as a main component,
- wherein the crystalline oxide thin film has a thickness of 80 nm or less,
- the crystalline oxide thin film comprises a high-carrier concentration region A and a low-carrier concentration region B that have different carrier concentrations in a plane direction thereof,
- the carrier concentration of the high-carrier concentration region A is 1019 cm−3 or more and 1022 cm−3 or less, and
- the carrier concentration of the high-carrier concentration region A is 8 times or more as high as the carrier concentration of the low-carrier concentration region B.
A crystalline oxide thin film, comprising In as a main component,
- wherein the crystalline oxide thin film has a thickness of 80 nm or less,
- an average spacing D between crystal grain boundaries of the crystalline oxide thin film is 2 μm or less, and
- the crystalline oxide thin film has a carrier concentration of 1019 cm−3 or more and 1022 cm−3 or less.
Dependencies are inferred from the claim text.