Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKeJing Yu, Ru-Shang Hsiao
Life of this patent
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Abstract
A method includes: forming a dielectric layer on a substrate; forming an active region of a MOS device; forming a sacrificial gate structure of the MOS device; forming a source feature and a drain feature of the MOS device, wherein the drain feature is formed above the dielectric layer; replacing the sacrificial gate structure with a replacement metal gate; and forming a first backside power rail and a first backside VIA that connect to the drain feature through salicide formed in a recess in the dielectric layer; wherein the dielectric layer isolates the drain feature from the substrate.
Claims20
A semiconductor structure, comprising:
- a dielectric layer disposed on a substrate below a drain feature of a MOS device;
- wherein the dielectric layer isolates the drain feature from the substrate.
A method, comprising:
- forming a dielectric layer on a substrate;
- forming an active region of a MOS device;
- forming a sacrificial gate structure of the MOS device;
- forming a source feature and a drain feature of the MOS device, wherein the drain feature is formed above the dielectric layer;
- replacing the sacrificial gate structure with a replacement metal gate;
- and
- forming a first backside power rail and a first backside VIA that connect to the drain feature through salicide formed in a recess in the dielectric layer;
- wherein the dielectric layer isolates the drain feature from the substrate.
A semiconductor structure, comprising:
- a source feature, a drain feature, and a metal gate of a MOS device disposed above a substrate;
- a dielectric layer disposed on the substrate and below the drain feature, wherein the dielectric layer isolates the drain feature from the substrate;
- and
- a backside power rail and a backside VIA that connect to the drain feature through salicide in a recess in the dielectric layer.
Dependencies are inferred from the claim text.