Back to results
US 2026/0238189 A1Published application
Substrate-mounted integrated structure comprising a ferroelectric layer with selective polarisation, and method for manufacturing same
OwnerAlexis Drouin, Sébastien Ledrappierinventors
Life of this patent
Estimating the term…
Abstract
A structure includes a ferroelectric layer having a first polarization in a first area and a second polarization, opposite to the first polarization, in a second area different from the first area. The first polarization and the second polarization are oriented perpendicularly or obliquely to the ferroelectric layer. The second polarization area has a hydrogen concentration greater than the first polarization area. The structure further includes a support and a dielectric layer disposed between the support and the ferroelectric layer.
Claims20
A structure, comprising:
- a ferroelectric layer having a first polarization in a first zone and a second polarization opposite the first polarization, in a second zone distinct from the first zone, wherein the first polarization and the second polarization are oriented perpendicularly or obliquely to the ferroelectric layer, the second zone having a higher hydrogen concentration than the first zone;
- a carrier;
- and
- a dielectric layer interposed between the carrier and the ferroelectric layer.
1 more element
A method for manufacturing a ferroelectric element comprising:
- providing a ferroelectric element having a first polarization;
- selectively enriching the ferroelectric element with hydrogen ions through a face of the ferroelectric element;
- and
- annealing the ferroelectric element after introducing the hydrogen ions, at a temperature ranging between 400° C. and 700° C., so as to switch the first polarization of the ferroelectric-layer element in a volume defined by the selective introduction of enrichment with the hydrogen ions.
1 more element
Dependencies are inferred from the claim text.