Methods of fabricating piezoelectric acoustic lamb wave resonators having mass loading frames
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsRenyuan Wang, Xifeng Qian
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Abstract
A method of fabricating an acoustic wave lamb resonator comprises forming a recess in a substrate, forming a sacrificial material within the recess, forming a piezoelectric film directly on an upper surface of the substrate and on an upper surface of the sacrificial material, forming a plurality of electrodes on an upper surface of the piezoelectric film, forming an opening in the piezoelectric film, and selectively removing the sacrificial material so that the piezoelectric film is suspended above the recess.
Claims26
A method of fabricating an acoustic wave lamb resonator, the method comprising:
- forming a recess in a substrate;
- forming a sacrificial material within the recess;
- forming a piezoelectric film directly on an upper surface of the substrate and on an upper surface of the sacrificial material;
- forming a plurality of electrodes on an upper surface of the piezoelectric film;
- forming an opening in the piezoelectric film;
- and
- selectively removing the sacrificial material so that the piezoelectric film is suspended above the recess.
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A method of fabricating an acoustic wave lamb resonator, the method comprising:
- forming a mask on a substrate;
- etching the substrate using the mask as an etch mask to form a recess in the substrate;
- forming a sacrificial material within the recess;
- forming a piezoelectric film directly on an upper surface of the substrate and on an upper surface of the sacrificial material;
- forming a plurality of electrodes on an upper surface of the piezoelectric film;
- forming an opening in the piezoelectric film;
- and
- selectively removing the sacrificial material so that the piezoelectric film is suspended above the recess.
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A method of fabricating an acoustic wave lamb resonator, the method comprising:
- selectively oxidizing a silicon substrate to form a recess in the silicon substrate that is filled with a first silicon oxide pattern;
- removing the silicon oxide from the recess;
- selectively oxidizing the silicon substrate to fill the recess with a second silicon oxide pattern;
- forming a piezoelectric film directly on an upper surface of the substrate and on an upper surface of the second silicon oxide pattern;
- forming a plurality of electrodes on an upper surface of the piezoelectric film;
- forming an opening in the piezoelectric film;
- and
- selectively removing the second silicon oxide pattern so that the piezoelectric film is suspended above the recess.
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Dependencies are inferred from the claim text.