Semiconductor laser device and method for producing a semiconductor laser device

A semiconductor laser device comprising:

• a first semiconductor laser which is configured to emit, during operation of the semiconductor laser device, a first radiation with a first wavelength of maximum intensity along a first main emission direction;
• a second semiconductor laser which is configured to emit, during operation of the semiconductor laser device, a second radiation with a second wavelength of maximum intensity which is greater than the first wavelength of maximum intensity, along a second main emission direction;
• and
• a prismatic element with a base area, a radiation entry surface and a radiation exit surface,
• wherein
• the radiation entry surface and the radiation exit surface are side surfaces of the prismatic element which are oblique to each other and opposite to each other;
• the first radiation and the second radiation impinge on the radiation entry surface of the prismatic element;
• the first main emission direction and the second main emission direction are arranged relative to a normal of the radiation entry surface such that the semiconductor laser device emits the first radiation and the second radiation superimposed at the radiation exit surface;
• at least one of the semiconductor lasers comprises a plurality of emission regions;
• and
• both the first radiation and the second radiation undergo a refraction at the radiation entry surface and a refraction at the radiation exit surface when the radiation passes through the prismatic element.