MULTl-STEP THERMAL CHAMBER CLEAN

A method of cleaning a process chamber, the method comprising:

• providing, in the process chamber, a semiconductor substrate with a metal-containing resist film on a surface of the semiconductor substrate, wherein organometallic material is formed on one or more internal surfaces of the process chamber;
• exposing the one or more internal surfaces of the process chamber to an etch gas comprising a halide-containing gas to remove first portions of the organometallic material;
• exposing the one or more internal surfaces of the process chamber to a modifying gas comprising oxygen, nitrogen, water vapor, carbon dioxide, carbon monoxide, or mixtures thereof;
• and
• exposing the one or more internal surfaces of the process chamber to the etch gas to remove second portions of the organometallic material.

An apparatus for cleaning a process chamber, the apparatus comprising:

• a process chamber with a substrate support, wherein the substrate support is configured to support a semiconductor substrate comprising a metal-containing resist film formed on a surface of the semiconductor substrate;
• a vacuum line coupled to the process chamber;
• a gas line coupled to the process chamber;
• and
• a controller configured with instructions for performing the following operations:
• provide, in the process chamber, the semiconductor substrate, wherein organometallic material is formed on one or more internal surfaces of the process chamber;
• expose the one or more internal surfaces of the process chamber to a first non-plasma etch gas to remove first portions of the organometallic material;
• expose the one or more internal surfaces of the process chamber to a non-plasma modifying gas;
• and
• expose the one or more internal surfaces of the process chamber to a second non-plasma etch gas to remove second portions of the organometallic material.