Method of treating substrate including identifying condition of substrate

A method of controlling a substrate treating apparatus including a treating space, a chuck configured to support a substrate in the treating space and providing a bottom electrode for generating a plasma in the treating space, a top electrode, an ion blocker disposed between the top electrode and the treating space, a first gas supply configured to supply a first process gas to a mixing space between the ion blocker and a shower head, a second gas supply configured to supply a second process gas to a plasma space between the top electrode and the ion blocker, a bottom power module for applying power to the bottom electrode, and a top power module for applying power to the top electrode, the method comprising:

• receiving information related to a substrate to be treated, the information including at least a type of an impurity remaining on the substrate;
• determining, on the basis of the information, one mode among a first mode, a second mode, and a third mode, the first mode being a mode for generating a plasma in the plasma space, the second mode being a mode for generating plasmas in both the plasma space and the treating space, and the third mode being a mode for generating a plasma only in the treating space;
• and
• controlling the bottom power module, the top power module, the first gas supply, and the second gas supply according to the determined mode.

A method of treating a substrate using a substrate treating apparatus including a treating space, a chuck configured to support the substrate in the treating space and providing a bottom electrode for generating a plasma in the treating space, a top electrode, an ion blocker disposed between the top electrode and the treating space, a shower head disposed between the ion blocker and the treating space, a first gas supply configured to supply a first process gas to a mixing space between the ion blocker and the shower head, and a second gas supply configured to supply a second process gas to a plasma space between the top electrode and the ion blocker, the method comprising:

• placing the substrate on the chuck;
• receiving information including a type of an impurity remaining on the substrate;
• when the information indicates that both organic impurities and inorganic impurities remain on the substrate, selecting a first mode or a second mode, wherein:
• when the first mode is selected, treating the substrate by:
• supplying, by the second gas supply, a second process gas including NF3 and at least one of He and Ar to the plasma space,
• supplying, by the first gas supply, a first process gas including NH3 to the mixing space,
• applying power to the top electrode to generate a plasma in the plasma space while no power is applied to the bottom electrode,
• passing the plasma through the ion blocker to remove ions from the plasma, and
• alternating between a first radical process in which a second process gas including at least one of H2, NH3, NF3, and O is supplied to the plasma space to generate a plasma for removing organic impurities on the substrate, and
• a second radical process in which the second process gas including NF3 is supplied to the plasma space and the first process gas including NH3 is supplied to the mixing space to react with the plasma to generate NH4F, whereby SiO2 remaining on the substrate is removed in a form of (NH4)2SiF6, and
• controlling a pressure in the treating space to 0.5 Torr to 15 Torr;
• and
• when the second mode is selected, treating the substrate by:
• supplying, by the first gas supply, a first process gas including at least one of He, Ar, and Xe and at least one of NH3, H2, N2, O, NF3, and F2 to the treating space through the mixing space,
• alternating between an ion treatment process in which power is applied to the bottom electrode to generate a first plasma including ions in the treating space, and a radical treatment process in which power is applied to the top electrode to generate a second plasma in the plasma space and ions are removed from the second plasma by the ion blocker, and
• controlling a pressure in the treating space to 5 mTorr to 150 mTorr;
• and
• when the information indicates that only organic impurities remain on the substrate, selecting a third mode and treating the substrate by:
• supplying, by the first gas supply, a first process gas including at least one of He, Ar, Xe, NH3, H2, N2, O, NF3, and F2 to the treating space through the mixing space,
• applying power to the bottom electrode to generate a plasma including ions in the treating space while no power is applied to the top electrode,
• treating the substrate with the plasma including ions to remove the organic impurities, and
• controlling a pressure in the treating space to 5 mTorr to 150 mTorr.