Capacitor and memory device including the same, method of manufacturing capacitor, method of manufacturing memory device

A capacitor comprising:

• a first electrode;
• a second electrode spaced apart from the first electrode;
• and
• an interface structure disposed between the first electrode and the second electrode,
• wherein the interface structure comprises:
• a dielectric film disposed between the first electrode and the second electrode;
• a first interface film disposed between the first electrode and the dielectric film;
• and
• a second interface film disposed between the second electrode and the dielectric film,
• wherein the dielectric film comprises:
• a first dielectric film comprising an oxide having a first metal as a central element, the first metal being a tetravalent element;
• a second dielectric film comprising an oxide having a second metal as a central element, the second metal being a trivalent element;
• a third dielectric film comprising an oxide having the first metal as a central element, the first metal being a tetravalent element;
• and
• a fourth dielectric film comprising an oxide having the second metal as a central element, the second metal being a trivalent element,
• wherein each of the first and third dielectric films has a thickness of 10 to 30 Å, and
• wherein a sum of thicknesses of the first to fourth dielectric films is 40 to 60 Å.