Nand memory device with horizontal channel for performing multiplication
AssigneeMicron Technology, Inc.
InventorsKamal Karda, Hernan Castro
Life of this patent
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Abstract
Systems, methods, and apparatus for memory devices that perform multiplication using three-dimensional NAND flash memory cells with horizontal channels. In one approach, memory cells in a string share a common semiconductor channel layer. Read word lines are located on a first side of the channel layer. Write word lines are located on an opposite second side of the channel layer. The read word lines are used to apply read voltages to selected memory cells and pass voltages to non-selected memory cells when performing multiplication. The write word lines are used to program the memory cells when storing weights for a neural network.
Claims20
A device comprising:
- a memory cell having a semiconductor channel;
- a read word line located on a first side of the channel;
- and
- a write word line located on an opposite second side of the channel.
An apparatus comprising:
- a string of memory cells, each memory cell having a horizontal channel;
- an access line coupled to the string;
- and
- at least one controller configured to accumulate current from the access line.
A method comprising:
- programming a memory cell using a first access line;
- and
- reading the memory cell using a second access line.
Dependencies are inferred from the claim text.