Method for forming patterned photoresist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.
Claims20
A method, comprising:
- forming a patterned photoresist over a substrate;
- forming a polymer layer surrounding the patterned photoresist, wherein the patterned photoresist comprises acid-labile groups on a surface of the patterned photoresist;
- heating the polymer layer to generate protons such that the generated protons react with the acid-labile groups of the surface of the patterned photoresist to transfer the acid-labile groups into hydrophilic groups on the surface of the patterned photoresist;
- and
- removing the polymer layer to expose the patterned photoresist.
A method, comprising:
- forming a patterned photoresist over a substrate, wherein the patterned photoresist comprises cavities on sidewalls of the patterned photoresist;
- applying a molding solution over the patterned photoresist to enter the molding solution into the cavities on the sidewalls of the patterned photoresist and around the patterned photoresist;
- drying the molding solution to form a molding layer;
- heating the molding layer and the patterned photoresist at a temperature greater than a glass transition temperature of the molding layer and a glass transition temperature of the patterned photoresist;
- and
- removing the molding layer using a solvent.
A method, comprising:
- forming a patterned photoresist over a substrate, wherein the patterned photoresist comprising hydrophobic acid-labile groups on a surface of the patterned photoresist;
- forming a molding layer covering the patterned photoresist;
- heating the molding layer at a first temperature higher than a glass transition temperature of the molding layer to generate protons from the molding layer such that the generated protons react with the hydrophobic acid-labile groups on the surface of the patterned photoresist to transfer the hydrophobic acid-labile groups into hydrophilic groups on the surface of the patterned photoresist;
- and
- removing the molding layer and the hydrophilic groups on the surface of the patterned photoresist.
Dependencies are inferred from the claim text.