Metrology and inspection apparatus for material layer including three-dimensional nanostructures, method of manufacturing semiconductor device using the same, and method of performing metrology and inspection

A method of manufacturing a semiconductor device, comprising:

• forming a material layer on a substrate, the material layer including a three-dimensional nanostructure;
• loading the substrate, on which the material layer is formed, onto a region of a substrate holder of a metrology and inspection apparatus;
• performing, while the substrate holder faces towards a first ultrasonic transducer of the metrology and inspection apparatus and the substrate holder is in a gas atmosphere having a pressure higher than atmospheric pressure, a metrology and inspection on the material layer by emitting ultrasonic waves from the first ultrasonic transducer to the material layer;
• unloading the substrate from the metrology and inspection apparatus after the metrology and inspection;
• and
• performing a subsequent process on the material layer.