In situ cleaning of deposition chamber with microwave plasma

A method of cleaning a vapor deposition substrate processing chamber, the method comprising:

• injecting through a gas injector having a front face and gas openings of the vapor deposition substrate processing chamber a first cleaning gas mixture comprising a first fluorine-containing gas and a first inert gas at a first temperature;
• generating a first microwave plasma from the first cleaning gas mixture to clean the gas injector and a substrate support surface of a pedestal of the vapor deposition substrate processing chamber;
• injecting a second cleaning gas mixture comprising a second fluorine-containing gas and a second inert gas at a second temperature through the gas injector at a second temperature;
• generating a second microwave plasma from the second cleaning gas mixture to clean the gas injector and the substrate support surface of the vapor deposition substrate processing chamber;
• and
• heating the pedestal and a substrate support surface of the vapor deposition substrate processing chamber to a third temperature that is greater than the first temperature and the second temperature and generating third microwave plasma from a third cleaning gas mixture.