Low temperature flowable vanadium oxide gap fill

A method of filling a gap on a substrate in a reaction space with vanadium oxide, the method comprising a plurality of deposition cycles, comprising:

• alternately and sequentially contacting the substrate with a vanadium precursor and an oxygen reactant, wherein the contacting the substrate with the vanadium precursor comprises pulsing the vanadium precursor into the reaction space for about 0.05 to about 0.2 seconds, and wherein the contacting the substrate with the oxygen reactant comprises pulsing the oxygen reactant into the reaction space for about 0.1 to about 0.5 seconds,
• wherein the gap comprises a distal part and a proximal part, both of which comprise a first material.

A method of forming a gap fill layer, comprising:

• providing a substrate comprising at least one opening formed thereon into a reaction space, wherein the at least one opening comprises a distal part and a proximal part, wherein the distal part and the proximal part both comprise a first material;
• and
• depositing a material comprising vanadium oxide in the at least one opening by pulsing a vanadium precursor into the reaction space for about 0.05 to about 0.2 seconds and pulsing an oxygen reactant into the reaction space for about 0.1 to about 0.5 seconds.