Method of producing perovskite semiconductor film
AssigneeNGK Insulators, Ltd.
InventorsAtsushi WAKAMIYA, Tomoya NAKAMURA, Noboru OHASHI, Yoshio KONDO, Yoshimasa OMIYA
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AssigneeNGK Insulators, Ltd.
InventorsAtsushi WAKAMIYA, Tomoya NAKAMURA, Noboru OHASHI, Yoshio KONDO, Yoshimasa OMIYA
Estimating the term…
A method of producing a perovskite semiconductor film includes the steps of: forming a coating film from a raw material solution, which is obtained by dissolving a perovskite compound in a good solvent, under a predetermined temperature; and dropping a poor solvent onto the coating film when the supersaturation degree S of the coating film satisfies the following formula (1) and the content ratio C of the good solvent in the coating film satisfies the following formula (2): Smax×0.80<S (1) in the formula (1), Smax represents the maximum supersaturation degree of the coating film that is achievable without dropping the poor solvent onto the coating film at the predetermined temperature; and Cs×0.15≤C (2) in the formula (2), Cs represents the content ratio of the good solvent in the raw material solution.
A method of producing a perovskite semiconductor film, comprising the steps of:
Dependencies are inferred from the claim text.