Microelectronic device package with integrated trench capacitor dies and semiconductor device die

A microelectronic device package, comprising:

• a semiconductor device die mounted to a die pad on a leadframe, the semiconductor device die having a device side surface with bond pads facing away from the die pad of the leadframe;
• a trench capacitor die mounted on and overlying a portion of the device side surface of the semiconductor device die;
• at least four wire bond connections coupling at least four bond pads of the trench capacitor die to corresponding bond pads of the semiconductor device die, the at least four wire bond connections comprising two pairs of interleaved wire bond connections, each of the two pairs comprising a wire bond connection configured to be coupled to a power bond pad and a wire bond connection configured to be coupled to a ground bond pad;
• and
• mold compound covering the die pad, semiconductor device die, the trench capacitor die and portions of the leadframe, the mold compound forming a body of a microelectronic device package, with portions of conductive leads of the leadframe exposed from the mold compound and forming terminals of the microelectronic device package.

A method, comprising:

• mounting a semiconductor die on a device mounting surface of a package substrate, the semiconductor die having conductor layers formed on a device side surface that are spaced by dielectric material and configured to carry a power supply voltage and a ground potential;
• mounting a trench capacitor die over the device side surface of the semiconductor die, the trench capacitor die having multiple bond pads configured to be coupled to the power supply voltage and multiple bond pads configured to be coupled to the ground potential, a trench capacitor in the trench capacitor die being coupled between the power supply voltage and ground potential;
• forming first electrical connections between the multiple bond pads of the trench capacitor die and the conductive layers configured to carry the power supply voltage and to the conductive layers configured to carry the ground potential on the device side surface of the semiconductor die, wherein the multiple bond pads of the trench capacitor die further comprise a first pair of power bond pads configured to be coupled to a power supply voltage and a second pair of ground bond pads configured to be coupled to a ground potential, wherein the first pair of bond pads is interleaved with the second pair of bond pads in an alternating pattern;
• forming second electrical connections between bond pads of the semiconductor device die and conductive leads of the package substrate;
• and
• covering the semiconductor device die, the trench capacitor die, and the device mounting surface of the package substrate with mold compound, the mold compound forming a body of a microelectronic device package, wherein portions of conductive leads of the package substrate are exposed from the mold compound to form terminals for the microelectronic device package.