Semiconductor structure and method for manufacturing same

A method of manufacturing a semiconductor structure, comprising:

• (A)
• forming a redistribution layer on a temporary fixing substrate;
• forming an organic bonding layer, which comprises an organic insulating layer and a metal pad, on the redistribution layer that is temporarily fixed on the temporary fixing substrate;
• arranging a plurality of silicon dies in a two-dimensional manner on the organic bonding layer formed on the redistribution layer and hybrid-bonding the silicon dies to the organic bonding layer;
• forming a resin mold layer that is filled between the plurality of silicon dies on the organic bonding layer and that covers upper surfaces of the plurality of silicon dies;
• and
• removing the temporary fixing substrate;
• or
• (B)
• forming an organic bonding layer, which comprises an organic insulating layer and a metal pad, on a temporary fixing substrate;
• arranging a plurality of silicon dies in a two-dimensional manner on the organic bonding layer formed on the temporary fixing substrate and hybrid-bonding the silicon dies to the organic bonding layer;
• forming a resin mold layer that is filled between the plurality of silicon dies on the organic bonding layer and that covers upper surfaces of the plurality of silicon dies;
• and
• removing the temporary fixing substrate;
• or
• (C)
• forming a high-density wiring layer on a build-up substrate;
• forming an organic bonding layer, which comprises an organic insulating layer and a metal pad, on the high-density wiring layer;
• arranging a plurality of silicon dies in a two-dimensional manner on the organic bonding layer formed on the high-density wiring layer and hybrid-bonding the silicon dies to the organic bonding layer;
• and
• forming a resin mold layer that is filled between the plurality of silicon dies on the organic bonding layer and that covers upper surfaces of the plurality of silicon dies.