Insulation structure for electrical isolation
AssigneeTexas Instruments Incorporated
InventorsRONGWEI ZHANG, ENIS TUNCER, HANK SUNG
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AssigneeTexas Instruments Incorporated
InventorsRONGWEI ZHANG, ENIS TUNCER, HANK SUNG
Estimating the term…
A semiconductor device includes a conductive layer including a first lead and a second lead separated by a gap. The conductive layer extends from a first conductive surface to a second conductive surface in a first direction and from a first lead outer edge of the first lead to a second lead outer edge of the second lead in a second direction. The semiconductor device also includes an insulation structure applied to the first conductive surface of the conductive layer and extending continuously from the first lead outer edge to the second lead outer edge. The insulation structure includes an adhesive layer and an insulation layer separated from the conductive layer by the adhesive layer. The semiconductor further includes a die affixed to the adhesive layer in the gap. The semiconductor device yet further includes bond wires between the die and the first lead and the second lead.
A semiconductor device comprising:
An integrated circuit (IC) device comprising:
A method for forming an integrated circuit (IC) device, the method comprising:
Dependencies are inferred from the claim text.