Manufacturing method of semiconductor structure
AssigneeNanya Technology Corporation
InventorCheng Yan JI
Life of this patent
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Abstract
The present disclosure provides a manufacturing method of a semiconductor structure including the following steps. A trench is formed between bit lines. A seed layer is deposited in the trench, and a first contact layer is deposited on the seed layer in the trench. A second contact layer is deposited on the first contact layer to fill the trench, , the second contact layer includes a recessed portion at a top surface of the second contact layer. A capping layer is deposited on the second contact layer to fill the recessed portion. An annealing process is performed on the first contact layer and the second contact layer, such that dopants in the first contact layer diffuse into the second contact layer to form a contact plug including the first contact layer and the second contact layer.
Claims19
A manufacturing method of a semiconductor structure, comprising:
- forming a trench between bit lines;
- depositing a seed layer in the trench;
- depositing a first contact layer on the seed layer in the trench;
- depositing a second contact layer on the first contact layer to fill the trench, wherein a second doping concentration of the second contact layer is lower than a first doping concentration of the first contact layer, wherein the second contact layer comprises a recessed portion at a top surface of the second contact layer;
- depositing a capping layer on the second contact layer to fill the recessed portion;
- and
- performing an annealing process on the first contact layer and the second contact layer, such that dopants in the first contact layer diffuse into the second contact layer to form a contact plug comprising the first contact layer and the second contact layer.
A manufacturing method of a semiconductor structure, comprising:
- forming a trench between bit lines;
- delivering a first source gas of SiH4 and PH3to the trench to form a first contact layer;
- delivering a second source gas of SiH4 and PH3 to the trench to form a second contact layer on the first contact layer,;
- delivering a third source gas of SiH4 and PH3 to the trench to form a capping layer on the second contact layer, wherein a second ratio of PH3 to SiH4 of the second source gas is between a first ratio of PH3 to SiH4 of the first source gas and a third ratio of PH3 to SiH4 of the third source gas;
- and
- performing an annealing process to form a contact plug from the first contact layer and the second contact layer.
Dependencies are inferred from the claim text.