In-situ hybrid bonding test measurements

A method comprising:

• bonding a first substrate comprising a plurality of first contacts to a second substrate comprising a plurality of second contacts;
• heating the first and second substrates to a first temperature configured to electrically couple the plurality of first contacts with corresponding ones of the plurality of second contacts;
• detecting, at the first temperature, continuity between a first terminal contact and a second terminal contact coupled with the plurality of first and second contacts;
• adjusting, based on the detection of continuity, a first process parameter of an anneal process to couple the first substrate with the second substrate;
• detecting, subsequent to adjusting the first process parameter, an impedance between the first terminal contact and the second terminal contact;
• and
• adjusting, based on the detection of continuity, a second process parameter of the anneal process based on a comparison of the impedance to an impedance threshold.

A system comprising:

• a heated chuck comprising:
• a plurality of separately engageable heating zones;
• and
• a plurality of terminal pairs configured to couple with corresponding terminals of a semiconductor device comprising a first substrate and at least one second substrate;
• and
• a controller configured to:
• receive, from the plurality of terminal pairs, a corresponding plurality of measurements at the plurality of terminal pairs;
• and
• adjust, based on the plurality of measurements, a temperature of the separately engageable heating zones.