Passivation elements of a thin film transistor
AssigneeZinite Corporation
InventorsMichael CLARK, Douglas W. BARLAGE, Lhing Gem SHOUTE
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Abstract
A novel method of passivizing the surface of elements intended to act as the source and/or drain of a thin film transistor to inhibit the formation of oxides on the surface of those elements during subsequent plasma enhanced deposition process steps is taught. The resulting passivized elements have a layer of plasma enhanced deposition compatible nitride formed on their surface and those structures with that layer of passivation nitride can act as the source and/or drain in a thin film metal oxide transistor, with the plasma enhanced deposition compatible nitride also able to serve as a source channel interfacial member.
Claims17
A method for passivizing the surface of an element serving as one of a source element and a drain element in an electronic device, wherein the element will be subject to plasma enhanced deposition, comprising the steps of:
- forming the element on a substrate;
- forming a layer of a plasma enhanced deposition compatible nitride on the surface of the element via plasma enhanced deposition to passivate the surface of the element;
- and
- forming a layer of a metal oxide over at least a portion of the passivized surface.
A metal oxide thin film transistor, comprising:
- a source element formed on a substrate;
- a layer of plasma enhanced deposition compatible nitride formed over the surface of the source element, the layer of plasma enhanced deposition compatible nitride passivizing the surface of the source element to inhibit the formation of an oxide thereon;
- a drain element formed on the substrate;
- a metal oxide semiconductor channel material formed over at least a portion of the source element and the layer of plasma enhanced deposition compatible nitride and contacting the drain element;
- a gate dielectric formed over the metal oxide semiconductor channel material;
- and
- a gate element formed over the gate dielectric.
Dependencies are inferred from the claim text.