Spin current magnetization rotating element, magnetoresistive effect element, and magnetic memory

2:

• The spin current magnetization rotating element according to claim 1, wherein the one or more elements included in the spin-orbit torque wiring layer comprises a heavy metal element having an atomic number equal to or greater than an atomic number of yttrium.

3:

• The spin current magnetization rotating element according to claim 2, wherein the heavy metal element is tungsten.

4:

• The spin current magnetization rotating element according to claim 2, wherein the heavy metal element is tungsten having an orthorhombic structure with a space group of Fddd.

5:

• The spin current magnetization rotating element according to claim 1, wherein γ is in a range of 85°≤γ≤95°.

6:

• The spin current magnetization rotating element according to claim 1, wherein b/a is in a range of 0.4≤b/a≤0.6.

7:

• The spin current magnetization rotating element according to claim 1, wherein b/a is in a range of 0.47≤b/a≤0.55.

8:

• The spin current magnetization rotating element according to claim 1, further comprising a substrate composed of a semiconductor or an insulator, wherein the spin-orbit torque wiring layer is formed on the substrate directly or via an intermediate layer.

10:

• A magnetic memory comprising a plurality of the magnetoresistive effect element according to claim 9.