Magnetic memory

A magnetic memory comprising:

• a first electrode;
• a second electrode and a third electrode, the second electrode and the third electrode being arranged away from each other in a first direction;
• a nonmagnetic conductive layer electrically connecting the second electrode and the third electrode to each other and extending in the first direction;
• a first magnetic layer located in a second direction intersecting with the first direction with respect to the nonmagnetic conductive layer, the first magnetic layer extending in the first direction and comprising a first region and a second region arranged along the first direction, where at least a portion of the first region is located between the first electrode and the nonmagnetic conductive layer in the second direction;
• a second magnetic layer located between the first region and the first electrode and having a magnetization direction fixed in the second direction;
• and
• a nonmagnetic insulating layer located between the first region and the second magnetic layer, wherein
• the first electrode is located between the second electrode and the third electrode, at a position at least partially overlapping the second electrode, or at a position at least partially overlapping the third electrode as viewed from the second direction,
• a magnetization direction of the first region is changeable to the second direction, and
• a magnetization direction of the second region is fixed in the first direction.

A magnetic memory comprising a first magnetoresistive element and a second magnetoresistive element, wherein

• each of the first magnetoresistive element and the second magnetoresistive element comprises:
• a first electrode;
• a second electrode and a third electrode arranged away from each other in a first direction;
• a nonmagnetic conductive layer electrically connecting the second electrode and the third electrode to each other and extending in the first direction;
• a first magnetic layer located in a second direction intersecting with the first direction with respect to the nonmagnetic conductive layer, the first magnetic layer extending in the first direction and comprising a first region and a second region arranged along the first direction, where at least a portion of the first region is located between the first electrode and the nonmagnetic conductive layer in the second direction;
• a second magnetic layer located between the first region and the first electrode;
• and
• a nonmagnetic insulating layer located between the first region and the second magnetic layer,
• the first electrode is located between the second electrode and the third electrode, at a position at least partially overlapping the second electrode, or at a position at least partially overlapping the third electrode as viewed from the second direction,
• the first magnetoresistive element and the second magnetoresistive element are arranged in a plane comprising a third direction intersecting with the first direction and the second direction, and
• the nonmagnetic conductive layer of the first magnetoresistive element is connected and continuous with the nonmagnetic conductive layer of the second magnetoresistive element, and the first magnetic layer of the first magnetoresistive element is connected and continuous with the first magnetic layer of the second magnetoresistive element, as viewed from the second direction.