Composite substrate and preparation method therefor

Abstract

The present disclosure provides a preparation method for the composite substrate, wherein the preparation method includes: performing first bonding between a first wafer and a second wafer, and performing a first thinning treatment on the second wafer to obtain a composite wafer; and performing second bonding between one side of the second wafer of the composite wafer and a piezoelectric wafer, and performing a second thinning treatment on the piezoelectric wafer to obtain the composite substrate. At most three single crystal layers can be realized by the preparation method for the composite substrate and the composite substrate. By using the anisotropy regulation for each layer of material, the more plentiful and more accurate performance regulation can be realized, so as to solve the problems that cannot be solved in the prior composite substrate, so that the device performance can be further improved.

Dependencies are inferred from the claim text.