Semiconductor structure and manufacturing method thereof
AssigneeWinbond Electronics Corp.
InventorsYi-Hsun Chung, Yu-Ting Chen, Kai Jen
Life of this patent
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Abstract
A semiconductor structure including a substrate structure and first device layers is provided. The first device layers are stacked on the substrate structure. The first device layers include semiconductor devices. Each of the semiconductor devices includes an active layer, a gate, a gate dielectric layer, a first doped region, and a second doped region. The gate is located on the active layer. The gate dielectric layer is located between the gate and the active layer. There is an air gap on one side of the gate dielectric layer. The air gap is located between the gate and the active layer. The first doped region and the second doped region are located in the active layer on two sides of the gate.
Claims17
A semiconductor structure, comprising:
- a substrate structure;
- and
- first device layers stacked on the substrate structure, wherein the first device layers comprise semiconductor devices, wherein each of the semiconductor devices comprises:
- an active layer;
- a gate located on the active layer;
- a gate dielectric layer located between the gate and the active layer, wherein there is an air gap on one side of the gate dielectric layer, and the air gap is located between the gate and the active layer;
- a first doped region and a second doped region located in the active layer on two sides of the gate;
- a first dielectric layer and a second dielectric layer located on opposite sides of the active layer;
- and
- a third dielectric layer located between the second dielectric layer and the first doped region and between the second dielectric layer and the second doped region, wherein the third dielectric layer seals the air gap.
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate structure;
- and
- forming first device layers on the substrate structure, wherein the first device layers are stacked on the substrate structure, the first device layers comprise semiconductor devices, and each of the semiconductor devices comprises:
- an active layer;
- a gate located on the active layer;
- a gate dielectric layer located between the gate and the active layer, wherein there is an air gap on one side of the gate dielectric layer, and the air gap is located between the gate and the active layer;
- a first doped region and a second doped region located in the active layer on two sides of the gate;
- a first dielectric layer and a second dielectric layer located on opposite sides of the active layer;
- and
- a third dielectric layer located between the second dielectric layer and the first doped region and between the second dielectric layer and the second doped region, wherein the third dielectric layer seals the air gap.
Dependencies are inferred from the claim text.