Semiconductor device including a capacitor structure and method of manufacturing the same

A semiconductor device comprising:

• a first electrode layer on a substrate and extending in a first direction perpendicular to a top surface of the substrate;
• a second electrode layer on the first electrode layer and extending in the first direction;
• a supporter pattern disposed outside a periphery of an upper side of the first electrode layer;
• a conductive skin layer disposed between a first portion of an upper side wall of the first electrode layer and the supporter pattern and being in contact with a bottom surface of the second electrode layer;
• an insulating skin layer disposed between a second portion of the upper side wall of the first electrode layer and the supporter pattern;
• a capacitor dielectric layer on a side wall of the first electrode layer and a side wall of the second electrode layer;
• and
• an upper electrode on the capacitor dielectric layer.

A semiconductor device comprising:

• a plurality of lower electrodes on a substrate;
• a capacitor dielectric layer on side walls of the plurality of lower electrodes;
• and
• an upper electrode on the capacitor dielectric layer,
• wherein each of the plurality of lower electrodes comprises:
• a first electrode layer comprising:
• a first main electrode portion extending in a first direction perpendicular to a top surface of the substrate;
• and
• a first electrode top portion on the first main electrode portion, wherein a step is defined between the first main electrode portion and the first electrode top portion, wherein the first electrode top portion is integrally connected to the first main electrode portion;
• a second electrode layer on the first electrode layer and extending in the first direction;
• and
• an insulating skin layer on a first portion of a side wall of the first electrode top portion and being in contact with a top surface of the first main electrode portion,
• wherein the top surface of the first main electrode portion has a first width in a horizontal direction,
• wherein a bottom surface of the first electrode top portion has a second width that is less than the first width in the horizontal direction, and
• wherein the step is defined between an edge of the top surface of the first main electrode portion and the side wall of the first electrode top portion.