Surface emitting laser apparatus and method for manufacturing the same
AssigneeHlj Technology Co., Ltd.
InventorsLI-HUNG LAI, LI-WEN LAI
Life of this patent
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Abstract
A surface emitting laser apparatus and a method for manufacturing the same. The surface emitting laser apparatus includes a first reflector layer, an active light-emitting layer, a second reflector layer, and a current confinement layer. The active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam. The current confinement layer is disposed above or below the active light-emitting layer. The current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than an energy gap width of the active light-emitting layer.
Claims5
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- an active light-emitting layer;
- a second reflector layer, wherein the active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- a current confinement layer disposed above or below the active light-emitting layer, wherein the current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than 0.8 eV and less than 1.4 eV, or is greater than 2.3 eV;
- and
- a current injection layer;
- wherein a part of the current injection layer is filled into a confinement hole of the current confinement layer, and the second reflector layer is disposed above the current injection layer.
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- an active light-emitting layer;
- a second reflector layer, wherein the active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- and
- a current confinement layer disposed in the first reflector layer or the second reflector layer and including at least one doped semiconductor layer;
- wherein, when the current confinement layer is disposed in the first reflector layer, the at least one doped semiconductor layer and the first reflector layer have different conductivity types;
- wherein, when the current confinement layer is disposed in the second reflector layer, the at least one doped semiconductor layer and the second reflector layer have different conductivity types.
A method for manufacturing a surface emitting laser apparatus, comprising:
- forming a first reflector layer;
- forming an active light-emitting layer on the first reflector layer;
- forming a current confinement layer, wherein the current confinement layer defines a confinement hole and includes an intrinsic semiconductor layer or a doping semiconductor layer;
- forming a second reflector layer, before the step of forming the second reflector layer, a current injection layer on the current confinement layer, wherein a part of the current injection layer is filled into the confinement hole;
- and
- forming a first electrode layer and a second electrode layer, wherein the first electrode layer is electrically connected to the first reflector layer, and the second electrode layer is electrically connected to the injection layer and surrounds the second reflector layer;
- wherein the second electrode layer has an opening for defining a light-emitting region, and the opening corresponds to the confinement hole.
Dependencies are inferred from the claim text.