Surface-emitting laser element

A surface-emitting laser element comprising a photonic crystal, the surface-emitting laser element comprising:

• a substrate that is light-transmissive;
• a first semiconductor layer which is formed on the substrate and in which an air-hole layer that serves as a photonic crystal layer is formed;
• an active layer formed on the first semiconductor layer;
• a second semiconductor layer formed on the active layer;
• a light-transmissive contact electrode that is partially formed on the second semiconductor layer and is in ohmic contact with the second semiconductor layer;
• a thermal conductivity adjustment layer that is formed on the second semiconductor layer, overlaps an outer peripheral portion of the contact electrode, has a thermal conductivity adjustment opening formed so as to partially cover an upper surface of the outer peripheral portion and expose the contact electrode, and is constituted by a layer including at least one material selected from insulators and semiconductors having a thermal conductivity lower than an effective thermal conductivity of the second semiconductor layer;
• and
• a light-reflecting metal electrode formed so as to fill the thermal conductivity adjustment opening of the thermal conductivity adjustment layer and cover at least an entirety of the contact electrode in a top view.

A surface-emitting laser element comprising a photonic crystal, the surface-emitting laser element comprising:

• a substrate that is light-transmissive;
• a first semiconductor layer which is formed on the substrate and in which an air-hole layer that serves as a photonic crystal layer is formed;
• an active layer formed on the first semiconductor layer;
• a second semiconductor layer formed on the active layer;
• a current confinement layer formed on the second semiconductor layer and having a contact opening;
• a contact electrode formed by filling the contact opening of the current confinement layer;
• a metal electrode formed on the contact electrode;
• a bonding metal formed on the metal electrode;
• a heat-dissipating substrate bonded to the bonding metal by the bonding metal;
• and
• a thermal conductivity adjustment layer provided inside one of the metal electrode, the bonding metal, and the heat-dissipating substrate, wherein
• the thermal conductivity adjustment layer includes at least one material selected from insulators and semiconductors having a thermal conductivity lower than at least one of the bonding metal and the heat-dissipating substrate, and
• the thermal conductivity adjustment layer has a thermal conductivity adjustment opening, and the thermal conductivity adjustment opening has a size and disposition such that the thermal conductivity adjustment opening is contained within the contact opening in a top view.