Method of operating plasma processing apparatus and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKenichi KOTE, Mitsutoshi ASHIDA
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Abstract
A method of operating a plasma processing apparatus includes: executing a first plasma process which simulates a plasma processing of a product substrate; executing a second plasma process with a higher electron temperature and a higher electron density than an electron temperature and an electron density in the first plasma process; and measuring, by a probe device, data representing a state of plasma generated during the execution of at least one of the first plasma process or the second plasma process and determining whether the plasma processing of the product substrate can be started based on the measured data.
Claims10
A method of operating a plasma processing apparatus, comprising:
- executing a first plasma process which simulates a plasma processing of a product substrate;
- executing a second plasma process with a higher electron temperature and a higher electron density than an electron temperature and an electron density in the first plasma process;
- and
- measuring, by a probe device, data representing a state of plasma generated during the execution of at least one of the first plasma process or the second plasma process and determining whether the plasma processing of the product substrate can be started based on the measured data.
A plasma processing apparatus, comprising:
- a processing container;
- a gas supply configured to supply gas into the processing container;
- a plasma source configured to introduce electromagnetic waves into the processing container;
- and
- a controller,
- wherein the controller is configured to control the gas supply and the plasma source to perform a process including:
- executing a first plasma process which simulates a plasma processing of a product substrate;
- executing a second plasma process with a higher electron temperature and a higher electron density than an electron temperature and an electron density in the first plasma process;
- and
- measuring, by a probe device, data representing a state of plasma generated during the execution of at least one of the first plasma process or the second plasma process and determining whether the plasma processing of the product substrate can be started based on the measured data.
Dependencies are inferred from the claim text.