3d semiconductor memory device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Jin-Woo Han
Life of this patent
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Abstract
A 3D semiconductor device, the device including: a first level including a first single crystal silicon layer; a second level including single crystal transistors, where the first level is overlaid by the second level; a transferred layer and a bonded layer, where the second level is bonded to the first level, where the second level includes a thickness less than 2 microns, and where the second level includes a plurality of memory cells; and a digital-to-analog converter, where the second level includes at least four memory arrays, and where each of the at least four memory arrays is independently controlled.
Claims20
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal silicon layer;
- a second level comprising single crystal transistors,
- wherein said first level is overlaid by said second level;
- a transferred layer and a bonded layer,
- wherein said second level is bonded to said first level,
- wherein said second level comprises a thickness less than 2 microns, and
- wherein said second level comprises a plurality of memory cells;
- and
- a digital-to-analog converter,
- wherein said second level comprises at least four memory arrays, and
- wherein each of said at least four memory arrays is independently controlled.
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal silicon layer;
- a second level comprising single crystal transistors,
- wherein said first level is overlaid by said second level;
- a transferred layer and a bonded layer,
- wherein said second level is bonded to said first level,
- wherein said second level thickness is less than 2 microns, and
- wherein said second level comprises a plurality of memory cells;
- a digital-to-analog converter,
- wherein said second level comprises at least four memory arrays;
- and
- at least one Central Processing Unit (“CPU”).
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal silicon layer;
- a second level comprising single crystal transistors,
- wherein said first level is overlaid by said second level;
- a transferred layer and a bonded layer,
- wherein said second level is bonded to said first level,
- wherein said second level thickness is less than 2 microns,
- wherein said second level comprises a plurality of memory cells;
- a counter circuit,
- wherein said second level comprises at least four memory arrays;
- and
- at least one Central Processing Unit (“CPU”).
Dependencies are inferred from the claim text.