Caching lookup tables for block family error avoidance

A memory device, comprising:

• memory including at least a first memory location and a second memory location;
• and
• a plurality of controllers operatively coupled to the memory and including at least a low-level controller associated with the first memory location and a high-level controller associated with the second memory location, the plurality of controllers configured to:
• receive a write command associated with host data;
• write the host data to the first memory location, wherein the host data is associated with a block family and the first memory location stores a subset of one or more block family error avoidance (BFEA) tables that are stored at the second memory location;
• and
• read the host data from the first memory location using a modified threshold voltage that is obtained based on applying a threshold voltage offset to a base read level voltage associated with the host data, wherein the threshold voltage offset is determined based on the subset of the one or more BFEA tables.

A method, comprising:

• receiving, by one or more controllers of a memory device, a write command associated with host data;
• writing, by the one or more controllers of the memory device, the host data to a first memory location, wherein the host data is associated with a block family and the first memory location stores a subset of one or more block family error avoidance (BFEA) tables that are stored at a second memory location;
• and
• reading, by the one or more controllers of the memory device, the host data from the first memory location using a modified threshold voltage that is obtained based on applying a threshold voltage offset to a base read level voltage associated with the host data, wherein the threshold voltage offset is determined based on the subset of the one or more BFEA tables.