System and method of performing a read operation
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsJianjie LI, Wei HUANG, Weijun WAN, Qianqian SHI
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Abstract
The present disclosure relates to methods and devices for performing a read operation in a memory. In one example, a method for operating a memory device includes performing first sensing operations on memory cells of the memory device based on a first read voltage and a first set of develop times. The memory cells are coupled to a word line. The method further includes selecting a first read develop time from the first set of develop times based on results of the first sensing operations and performing a read operation on the memory cells based on the first read voltage and the first read develop time.
Claims20
A method for operating a memory device, the method comprising:
- performing first sensing operations on memory cells of the memory device based on a first read voltage and a first set of develop times, wherein the memory cells are coupled to a word line;
- selecting a first read develop time from the first set of develop times based on results of the first sensing operations;
- and
- performing a read operation on the memory cells based on the first read voltage and the first read develop time.
A method for operating a memory device, the method comprising:
- determining first groups of memory cells in memory cells of the memory device and a first set of develop times, wherein each group of memory cells of the first groups of memory cells is associated with a respective pair of develop times in the first set of develop times;
- performing first sensing operations on each group of memory cells of the first groups of memory cells based on the respective pair of develop times associated with the group of memory cells, wherein the first sensing operations comprise a first set of discharging and sensing operations and a second set of discharging and sensing operations;
- and
- selecting one of the first set of develop times as a first read develop time based on results of the first sensing operations.
A memory device comprising:
- a memory array comprising a word line and memory cells coupled to the word line;
- and
- a peripheral circuit comprising a control circuit and a page buffer, wherein the control circuit is configured to perform operations comprising:
- determining first groups of memory cells in the memory cells and a first set of develop times, wherein each group of memory cells of the first groups of memory cells is associated with a respective pair of develop times in the first set of develop times;
- performing first sensing operations on each group of memory cells of the first groups of memory cells based on the respective pair of develop times associated with the group of memory cells;
- and
- selecting one of the first set of develop times as a first read develop time based on results of the first sensing operations.
Dependencies are inferred from the claim text.