Design based regi correction (dbrc) - based photomask manufacturing method for controlling pattern position of wafer and mask
AssigneeSamsung Electronics Co., Ltd.
InventorsHyoyeon Kim, Youngsu Sung, Minjeong Kim, Jeongmin Kim, Seoeun Seol
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Abstract
In a method of manufacturing a photomask, a target layout is designed, the target layout having a target pattern to be implemented on a photomask. Overlay error data of a wafer is used to generate a registration correction map. The registration correction map is applied to the target layout to generate a correction layout. An exposure process, a development process, and an etching process are performed on a blank mask to form a photomask. The photomask is inspected based on inspection conditions set based on the correction layout.
Claims20
A method of manufacturing a photomask, the method comprising:
- generating a target layout having a target pattern to be implemented on a photomask;
- generating a registration correction map based on overlay error data of a wafer;
- generating a correction layout based on the registration correction map being applied to the target layout;
- forming a photomask by performing an exposure process, a development process, and an etching process on a blank mask;
- and
- inspecting the photomask based on inspection conditions that are determined based on the correction layout.
A method of manufacturing a photomask, the method comprising:
- generating a target layout having a target pattern to be implemented on a photomask;
- forming a circuit pattern on a wafer based on the target layout;
- measuring an overlay error from the circuit pattern of the wafer to obtain overlay error data;
- performing modeling to extend the overlay error data to include unmeasured areas of the wafer;
- generating a registration correction map based on the overlay error data;
- generating a correction layout based on the registration correction map being applied to the target layout of the photomask;
- forming the photomask by performing an exposure process, a development process, and an etching process on a blank mask;
- and
- measuring the photomask based on measurement conditions that are determined based on the correction layout.
A method of manufacturing a photomask, the method comprising:
- generating a target layout having a target pattern to be implemented on a photomask;
- generating a registration correction map based on overlay error data of a wafer ;
- generating a correction layout based on the registration correction map being applied to the target layout of the photomask ;
- forming a photomask by performing an exposure process, a development process, and an etching process on a blank mask;
- generating a measurement recipe based on the correction layout, the measurement recipe including measurement conditions for measuring a critical dimension or a position error of a pattern formed on the photomask;
- generating an inspection recipe based on the correction layout, the inspection recipe including inspection conditions for inspecting the photomask;
- applying a measurement control signal to a measuring device to measure the photomask, the measurement control signal being based on the measurement recipe;
- and
- inputting an inspection control signal to an inspection device to inspect the photomask, the inspection control signal being based on the inspection recipe.
Dependencies are inferred from the claim text.