Resist composition, resist pattern formation method, compound, and polymer compound
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsKoshi ONISHI, Takashi NAGAMINE
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AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsKoshi ONISHI, Takashi NAGAMINE
Estimating the term…
A resist composition that uses a polymer compound, which has a constitutional unit derived from a compound represented by General Formula (a0-m) and generates an acid upon exposure, as a base resin. In Formula (a0-m), W0 represents a polymerizable group-containing group; R0 represents a hydrocarbon group, an acyl group, an alkoxyalkyl group, or a hydrogen atom; L01 represents a divalent linking group or a single bond; Rar represents an aromatic ring to which an iodine atom is bonded as a substituent; L02 represents a divalent linking group; n0 represents an integer of 1 or more; m represents an integer of 1 or more; and (Mm+)n0/m represents a counter cation. Improvements in sensitivity when forming a resist pattern and in lithography characteristics such as dimensional uniformity a achieved, and the process margin is widened, when the resist composition is used
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid, the resist composition comprising:
A compound represented by General Formula (a0-m),
Dependencies are inferred from the claim text.