Resist composition, resist pattern formation method, compound, and acid generator

A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid, the resist composition comprising:

• a base material component (A) whose solubility in a developing solution is changed by the action of the acid;
• and
• a compound (B0) represented by General Formula (b0),
• wherein Z is a cyclic group which contains a heterocyclic ring comprising at least a carbon atom and a nitrogen atom, Xb0 is an iodine atom or a bromine atom, nxb0 is an integer of 1 or greater as long as atomic valence is allowed, Rb0 is a substituent other than an iodine atom and a bromine atom, nrb0 is an integer of 0 or greater as long as atomic valence is allowed, Yb00 is a linking group having 1 to 20 carbon atoms or a single bond, nz0 is an integer of 1 or greater as long as atomic valence is allowed, when nz0 is 1, Yb01 is a divalent linking group or a single bond, when nz0 is an integer of 2 or more, Yb01 is an (nz0+1)-valent linking group, when Yb01 is a single bond, Yb02 is a divalent linking group, when Yb01 is not a single bond, Yb02 is a divalent linking group or a single bond, Vb0 is an alkylene group, a fluorinated alkylene group, or a single bond, Yb02 and Vb0 do not simultaneously form a single bond, R0 is a fluorinated alkyl group having 1 to 5 carbon atoms, a fluorine atom, or a hydrogen atom, Mm+ represents an m-valent organic cation, and m is an integer of 1 or greater.