Method for producing photonic device, and photonic device
AssigneesUniversity Public Corporation Osaka, Kyoto University
InventorsYasushi TAKAHASHI, Yuji OTA, Shunsuke IKUTA, Susumu NODA, Takashi ASANO, Makoto OKANO
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Abstract
This invention reduces internal absorption of a photonic device. A method, in accordance with the present disclosure, for producing a photonic device carries out: a first step (step S30) of processing silicon (1) by dry etching to obtain a specific shape (4); and a second step (step S50) of removing a surface layer (4a) of the specific shape (4) by chemical etching or thermal etching.
Claims21
A method for producing a photonic device, comprising:
- a first step of processing silicon or a silicon compound by dry etching to obtain a specific shape;
- and
- a second step of removing a surface layer of the specific shape by chemical etching or thermal etching such that a part extending up to a depth of not less than 2 nm and not more than 30 nm from a surface of the specific shape is removed.
A method for producing a photonic device, comprising:
- a first step of processing silicon or a silicon compound by dry etching to obtain a specific shape;
- and
- a second step of removing a surface layer of the specific shape by chemical etching or thermal etching,
- the specific shape being a plurality of pores in a photonic crystal,
- an opening of each of the plurality of pores being formed into a circular shape by the dry etching, and
- the opening of each of the plurality of pore being expanded to have an octagonal shape by the chemical etching or the thermal etching.
(canceled)
A photonic device comprising:
- a specific shape obtained by processing silicon or a silicon compound by dry etching,
- the photonic device not having a surface layer extending up to 10 nm from a surface of the specific shape which is immediately after being subjected to the dry etching.
The method according to claim wherein:
- the specific shape is a plurality of pores in a photonic crystal;
- the dry etching is plasma etching;
- the thermal etching is a method constituted by a combination of (i) oxidation with a high-temperature oxygen atmosphere and (ii) removal of an oxide film by washing with any one selected from the group consisting of a diluted hydrofluoric acid, a phosphoric acid solution, and a nitric acid solution;
- the plurality of pores are formed by the plasma etching;
- and
- a surface layer on a side wall of each of the plurality of pores is removed by the oxidation and the washing.
Dependencies are inferred from the claim text.