Substrate processing method, substrate processing apparatus, and substrate processing system
AssigneeTokyo Electron Limited
InventorsNaoko SUZUKI, Miyako KANEKO, Tadashi MITSUNARI, Yasuhiro HAMADA, Yuutaro KISHI
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Abstract
A substrate processing method includes providing a substrate including a patterned base film; exposing the substrate to a plasma generated from a first gas containing a modifying gas, thereby hydrophobizing a surface of the patterned base film, the surface including a top of the patterned base film; and exposing the substrate to a plasma generated from a second gas containing a raw material gas containing carbon and hydrogen, thereby selectively forming a carbon film over the hydrophobized top.
Claims11
A substrate processing method, comprising:
- providing a substrate including a patterned base film;
- exposing the substrate to a plasma generated from a first gas containing a modifying gas, thereby hydrophobizing a surface of the patterned base film, the surface including a top of the patterned base film;
- and
- exposing the substrate to a plasma generated from a second gas containing a raw material gas containing carbon and hydrogen, thereby selectively forming a carbon film over the hydrophobized top.
A substrate processing apparatus configured to perform processing on a substrate including a patterned base film, the substrate processing apparatus comprising:
- a processor;
- and
- a controller including circuitry configured to:
- control the processor to expose the substrate to a plasma generated from a first gas containing a modifying gas, thereby hydrophobizing a surface of the patterned base film, the surface including a top of the patterned base film, and
- control the processor to expose the substrate to a plasma generated from a second gas containing a raw material gas containing carbon and hydrogen, thereby selectively forming a carbon film over the hydrophobized top.
A substrate processing system configured to perform processing on a substrate including a patterned base film, the substrate processing system comprising:
- a first processor;
- a second processor;
- and
- a controller including circuitry configured to:
- control the first processor to expose the substrate to a plasma generated from a first gas containing a modifying gas, thereby hydrophobizing a surface of the patterned base film, the surface including a top of the patterned base film, and
- control the second processor to expose the substrate to a plasma generated from a second gas containing a raw material gas containing carbon and hydrogen, thereby selectively forming a carbon film over the hydrophobized top.
Dependencies are inferred from the claim text.