Electronic devices and circuits

A method in accordance with any preceding claim, wherein said depositing by ALD comprises supplying a first precursor (P1) to a first spatial region (R1), supplying a second precursor (P2) to a second spatial region (R2) separate from the first spatial region, and alternately positioning said first limited portion (201), or parts of said first limited portion, in or under said first region and then in or under said second region.

A method in accordance with any preceding claim, wherein said depositing by ALD comprises using an atmospheric-pressure spatial ALD, sALD, technique.

A method in accordance with any preceding claim, further comprising forming a patterned layer of inhibitor material (4) over said substrate before said depositing by ALD, the inhibitor material inhibiting said ALD, and the patterned layer of inhibitor material comprising a window (w) over said first limited portion of the substrate.

A method in accordance with any preceding claim, further comprising processing at least a portion of the first thin film to alter at least one of its electronic or electrical properties.

A method in accordance with any preceding claim, further comprising selectively depositing over a second limited portion of said substrate, by atomic layer deposition (ALD), a second thin film (T2) of conductive, semiconductive, resistive, or dielectric material, said second thin film providing at least another one of said first plurality of components.

A method in accordance with any preceding claim, further comprising forming at least one of said first plurality of components by forming a layer (120, 130, 140, 150, 160) of conductive, semiconductive, resistive, or dielectric material over at least a portion of said substrate and patterning said layer.

A method in accordance with any preceding claim, for manufacturing at least said first electronic device (1a) and a second electronic device (1b) comprising a second plurality of components (11b, 12b, 13b, 131b, 132b, 14b, 15b, 16b), wherein said substrate supports the second electronic device, at least during its manufacture, and said first thin film provides at least one of said second plurality of components.

A method in accordance with any preceding claim, for manufacturing at least said first electronic device and a third electronic device comprising a third plurality of components, wherein said substrate supports the third electronic device, at least during its manufacture, and the method further comprises selectively depositing over a third limited portion of said substrate, by atomic layer deposition (ALD), a third thin film of conductive, semiconductive, resistive, or dielectric material, said third thin film providing at least one of said third plurality of components.

A method of manufacturing an electronic circuit comprising a first plurality of electronic devices, each device comprising a respective plurality of components, the method comprising:

• providing a substrate to support the first plurality of electronic devices, at least during their manufacture;
• selectively depositing over a first limited portion of said substrate, by atomic layer deposition (ALD), a first thin film of conductive, semiconductive, resistive, or dielectric material, said first thin film providing at least one of said respective plurality of components of each of said first plurality of electronic devices.