Copper-doped silicon carbide composite, preparation method and use thereof
AssigneeZhejiang University
InventorsQiwei YANG, Chen WANG, Wenjun ZHANG, Qilong REN, Zhiguo ZHANG, Zongbi BAO, Baogen SU
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Abstract
Provided are a copper-doped silicon carbide composite, a preparation method and use thereof. The preparation method for the copper-doped silicon carbide composite includes subjecting a silicon- and carbon-containing precursor to arc plasma pyrolysis to obtain the copper-doped silicon carbide composite, where the silicon-and carbon-containing precursor includes an organochlorosilane; and a material of an anode used for the arc plasma pyrolysis includes copper.
Claims19
A method for preparing a copper-doped silicon carbide composite, comprising:
- subjecting a silicon-and carbon-containing precursor to arc plasma pyrolysis to obtain the copper-doped silicon carbide composite, wherein
- the silicon-and carbon-containing precursor comprises an organochlorosilane;
- and
- a material of an anode used for the arc plasma pyrolysis comprises copper.
The copper-doped silicon carbide composite of 10, wherein copper in the copper-doped silicon carbide composite is doped in a SiC lattice in a form of a copper-silicon solid solution;
- and
- the copper-silicon solid solution comprises Cu6.69Si and/or Cu3Si.
Dependencies are inferred from the claim text.