Power semiconductor module

A power semiconductor module, comprising:

• a power semiconductor die;
• a leadframe comprising a die pad and a power lead, wherein the die pad has a first surface facing the power semiconductor die and a second surface opposite to the first surface, wherein a main surface of the power semiconductor die is directly attached to the first surface of the die pad, and a power electrode of the power semiconductor die is electrically connected to the power lead;
• a housing mounted on the leadframe and surrounding a periphery of the power semiconductor die, wherein the housing comprises an electrically insulating material;
• and
• an encapsulant surrounded by the housing and encapsulating the power semiconductor die and part of the leadframe, wherein the second surface of the die pad is exposed to an exterior of the power semiconductor module, and wherein at least a part of the power lead is also exposed to the exterior of the power semiconductor module.