US 2026/0223747 A1 · POWER SEMICONDUCTOR MODULE

Abstract

There is provide a power semiconductor module comprising: a first substrate; a second substrate; a circuit board arranged between the first and second substrates; a first power semiconductor device T1, T2 comprising first and second power electrodes and arranged between the circuit board and the first substrate; and a second power semiconductor device T3, T4 comprising third and fourth power electrodes and arranged between the circuit board and the second substrate. The circuit board comprises a plurality of electrically conductive layers stacked with a plurality of electrically insulating layers along a stacking direction Z. At least one of the electrically insulating layers is arranged between adjacent ones of the electrically conductive layers. The plurality of electrically conductive layers comprises first, second and third electrically conductive layers which are spaced apart from one another along the stacking direction Z.

Claims26

Dependent claims

A power semiconductor module comprising:

a first substrate;
a second substrate;
a circuit board arranged between the first and second substrates;
a first power semiconductor device comprising first and second power electrodes and arranged between the circuit board and the first substrate;
and
a second power semiconductor device comprising third and fourth power electrodes and arranged between the circuit board and the second substrate;
wherein:
the circuit board comprises a plurality of electrically conductive layers stacked with a plurality of electrically insulating layers along a stacking direction;
at least one of the electrically insulating layers is arranged between adjacent ones of the electrically conductive layers;
and the plurality of electrically conductive layers comprises first, second and third electrically conductive layers which are spaced apart from one another along the stacking direction;
and
wherein:
the first power electrode is electrically connected to the first electrically conductive layer;
the second and third power electrodes are both electrically connected to the third electrically conductive layer;
and the fourth power electrode is electrically connected to the second electrically conductive layer.

12 more elements

A method of manufacturing a power semiconductor module, comprising:

attaching a first power semiconductor device to a first surface of a circuit board, wherein the first power semiconductor device comprises first and second power electrodes, and wherein the circuit board comprises a plurality of electrically conductive layers stacked with a plurality of electrically insulating layers along a stacking direction, at least one of the electrically insulating layers being arranged between adjacent ones of the electrically conductive layers, and wherein the plurality of electrically conductive layers comprises first, second and third electrically conductive layers which are spaced apart from one another along the stacking direction;
attaching a second power semiconductor device to a second surface of the circuit board, wherein the second surface is opposite to the first surface, and the second power semiconductor device comprises third and fourth power electrodes;
mounting the first surface of the circuit board to a first substrate such that the first power semiconductor device is between the circuit board and the first substrate;
and
mounting the second surface of the circuit board to a second substrate such that the second power semiconductor device is between the circuit board and the second substrate;
wherein attaching the first power semiconductor device and attaching the second power semiconductor device comprise:
electrically connecting the first power electrode to the first electrically conductive layer;
electrically connecting each of the second and third power electrodes to the third electrically conductive layer;
and
electrically connecting the fourth power electrode to the second electrically conductive layer.

7 more elements

Dependencies are inferred from the claim text.

Power semiconductor module

Life of this patent

Power semiconductor module

Life of this patent

Abstract

Claims26