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US 2026/0223743 A1Published application
Semiconductor module
AssigneeRohm Co., Ltd.
InventorAtsushi NOCHIDA
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Abstract
The semiconductor module includes a first device that has an IGBT and a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT.
Claims12
A semiconductor module comprising:
- a first device that has an IGBT;
- and
- a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT, wherein
- a ratio VFB/VRB of the forward breakdown voltage with respect to the reverse withstand voltage is set at a value in excess of 1.
1 more element
Dependencies are inferred from the claim text.