Bonding film, semiconductor module, inverter, electronic device, and method for manufacturing semiconductor module
AssigneeFurukawa Electric Co., Ltd.
InventorsHosei TAKIMOTO, Naoaki MIHARA, Hiroshi KANEKO
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Abstract
The present disclosure relates to a bonding film including a metal layer, a first bonding layer provided on one surface of the metal layer, and a second bonding layer provided on another surface of the metal layer, in which the metal layer contains a metal having a thermal conductivity of 100 W/m·K or higher at a temperature of 300 K, and the metal layer has a 0.2% offset yield strength of 250 MPa or lower.
Claims10
A bonding film comprising a metal layer, a first bonding layer provided on one surface of the metal layer, and a second bonding layer provided on another surface of the metal layer, wherein
- the metal layer contains a metal having a thermal conductivity of 100 W/m·K or higher at a temperature of 300 K, and
- the metal layer has a 0.2% offset yield strength of 250 MPa or lower.
Dependencies are inferred from the claim text.