Semiconductor device including a self-aligned contact layer with enhanced etch resistance
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Ming CHANG, Yao-Sheng HUANG, Hsiang-Pi CHANG, Lo-Heng CHANG, Yun-Ju FAN, Huang-Lin CHAO
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Abstract
A semiconductor device includes a semiconductor fin, an epitaxial region located on a side of the semiconductor fin, a silicide layer disposed on the epitaxial region, a contact plug disposed on the silicide layer and over the epitaxial region, and a self-aligned contact (SAC) layer disposed on the semiconductor fin. At least a part of the SAC layer is implanted with at least one implantation element. The semiconductor fin is spaced apart from the contact plug by the SAC layer.
Claims20
A semiconductor device, comprising:
- an epitaxial region disposed in an interconnect dielectric (ILD) layer;
- a silicide layer disposed on the epitaxial region;
- a contact plug disposed on the silicide layer and above the epitaxial region;
- and
- two isolation portions disposed over the ILD layer, and located on two opposite sides of the contact plug, wherein at least a part of one of the two isolation portions is implanted with at least one implantation element.
A method for manufacturing a semiconductor device, comprising:
- forming an isolation portion alongside a semiconductor fin;
- forming an epitaxial region on a lateral side of the semiconductor fin and above the isolation portion;
- performing an implantation process to implant at least one implantation element into a backside of the isolation portion opposite to the epitaxial region;
- after performing the implantation process, forming a silicide layer on a backside of the epitaxial region;
- and
- forming a contact plug on the silicide layer opposite to the epitaxial region.
A method for manufacturing a semiconductor device, comprising:
- forming two isolation portions alongside a semiconductor fin, the two isolation portions extending lengthwise in a first direction, and being spaced apart from each other in a second direction different from the first direction;
- forming two epitaxial regions on the semiconductor fin and above the two isolation portions, the two epitaxial regions being spaced apart from each other in the first direction;
- performing an implantation process to implant at least one implantation element into at least one of the two isolation portions;
- after performing the implantation process, forming a silicide layer on at least one of the two epitaxial regions;
- and
- forming a contact plug on the silicide layer opposite to the at least one of the two epitaxial regions.
Dependencies are inferred from the claim text.