Method and system for producing microelectronic components with a layer structure

A method for producing microelectronic components, comprising a carrier and at least one microelectronic functional layer system applied to the carrier, the method comprising:

• forming a functional layer system on a front side of a growth substrate;
• arranging a layer-shaped carrier on a side of the functional layer system opposite to the growth substrate to form an arrangement comprising the carrier, the functional layer system, and the growth substrate;
• radiating in laser radiation from a rear side of the growth substrate through the growth substrate such that the laser radiation, in a boundary area between the growth substrate and the functional layer system, weakens or destroys a connection between the growth substrate and the functional layer system in the boundary area in locally bounded areas or comprehensively;
• transferring the functional layer system or parts thereof onto the carrier to form a microelectronic component,
• wherein
• the boundary area is irradiated by direct laser interference patterning (DLIP), wherein a laser beam emitted by a primary laser radiation source is split into at least two partial beams and the partial beams are guided so that at least two partial beams coherent with one another extend through the growth substrate and a spatial intensity pattern results in a superposition area of the coherent laser beams comprising radiation micro-zones having constructive interference and relatively high power density of the laser radiation adjacent to areas of destructive interference and low power density of the laser radiation relative to the radiation micro-zones, wherein micro-zones damaged by the laser radiation of the radiation micro-zones are generated in the boundary area, which are located in an arrangement with lateral distances to one another.