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US 2026/0223477 A1Published application
Co-doped silicon wafer
AssigneeLongi Green Energy Technology Co., Ltd.
InventorsMaofeng DOU, Zhao WU, Jing WANG
Life of this patent
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Abstract
The present application relates to a silicon wafer, a solar cell, a solar cell string, and a solar cell module. In one example, a silicon wafer includes antimony and carbon. A ratio of a doping concentration of antimony to a doping concentration of carbon ranges from 1:0.1 to 1:12.5.
Claims20
A silicon wafer, comprising antimony and carbon, wherein a ratio of a doping concentration of antimony to a doping concentration of carbon ranges from 1:0.1 to 1:12.5.
A solar cell, comprising:
- a silicon substrate comprising:
- a silicon matrix;
- and
- a doped region inside a surface of at least one side of the silicon substrate, wherein the doped region is doped with a doping element selected from Group-IIIA elements or Group-VA elements;
- and
- at least one doped layer on a surface of at least one side of the silicon substrate;
- and
- at least one passivation layer between the at least one doped layer and the doped region,
- wherein the silicon substrate comprises antimony and carbon, wherein a ratio of a doping concentration of antimony to a doping concentration of carbon ranges from 1:0.1 to 1:12.5, and wherein, in the doped region, a sum of the doping concentration of antimony and a doping concentration of the doping element is less than or equal to 1 E+21 cm−3.
6 more elements
A solar module, comprising:
- a plurality of solar cells, an encapsulation layer, a cover, and a back sheet, wherein the plurality of solar cells are encapsulated in the encapsulation layer, the encapsulation layer is between the cover and the back sheet, and wherein at least one solar cell of the plurality of solar cells comprises:
- a silicon substrate comprising antimony and carbon, wherein a ratio of a doping concentration of antimony to a doping concentration of carbon ranges from 1:0.1 to 1:12.5.
Dependencies are inferred from the claim text.