Semiconductor wafer, semiconductor wafer group, and semiconductor device
OwnerKoichi NISHIKAWA, Eisuke SAKAMOTO +1inventors
InventorsKoichi NISHIKAWA, Eisuke SAKAMOTO, Tsuyoshi MIURA
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Abstract
To shorten a carrier lifetime in an epitaxial layer. A technical idea of the present disclosure is that a carrier lifetime distribution including, as an element, a carrier lifetime in an epitaxial layer measured at a plurality of measurement points has the following features. (1) In a case in which the average value of the carrier lifetime is defined as τm, τm≤0.4 μs is satisfied. (2) In a case in which the standard deviation of the carrier lifetime distribution is defined as στ, στ≤0.5 τm is satisfied.
Claims22
A semiconductor wafer comprising:
- a silicon carbide substrate having a crystal structure of 4H—SiC;
- and
- an epitaxial layer formed on the silicon carbide substrate,
- wherein, in a carrier lifetime distribution including, as an element, a carrier lifetime in the epitaxial layer measured at a plurality of measurement points,
- wherein, in a case in which an average value of the carrier lifetime is defined as τm, τm≤0.4 μs is satisfied, and
- wherein, in a case in which a standard deviation of the carrier lifetime distribution is defined as στ, στ≤0.5 τm is satisfied.
A semiconductor wafer comprising:
- a silicon carbide substrate having a crystal structure of 4H—SiC;
- and
- an epitaxial layer formed on the silicon carbide substrate,
- wherein, in a carrier lifetime distribution including, as an element, a carrier lifetime in the epitaxial layer measured at a plurality of measurement points,
- wherein, in a case in which an average value of the carrier lifetime is defined as τm, τm≤0.2 μs is satisfied, and
- wherein, in a case in which a standard deviation of the carrier lifetime distribution is defined as στ, στ≤0.05 τm is satisfied.
A semiconductor device comprising:
- a silicon carbide substrate having a crystal structure of 4H—SiC;
- and
- an epitaxial layer formed on the silicon carbide substrate,
- wherein, in a carrier lifetime distribution including, as an element, a carrier lifetime in the epitaxial layer measured at a plurality of measurement points,
- wherein, in a case in which an average value of the carrier lifetime is defined as τm, τm≤0.4 μs is satisfied, and
- wherein, in a case in which a standard deviation of the carrier lifetime distribution is defined as στ, στ≤0.5 τm is satisfied.
A semiconductor device comprising:
- a silicon carbide substrate having a crystal structure of 4H—SiC;
- and
- an epitaxial layer formed on the silicon carbide substrate,
- wherein, in a carrier lifetime distribution including, as an element, a carrier lifetime the epitaxial layer measured at a plurality of measurement points,
- wherein, in a case in which an average value of the carrier lifetime is defined as τm, τm≤0.2 μs is satisfied, and
- wherein, in a case in which a standard deviation of the carrier lifetime distribution is defined as στ, στ≤0.05 τm is satisfied.
Dependencies are inferred from the claim text.