Back to results
US 2026/0223400 A1Published application
Semiconductor devices and methods of fabrication thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Wei CHANG, Shahaji B. MORE, Chi-Yu CHOU, Yueh-Ching PAI
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure provide a method of forming a contact opening using selective ALE operations to remove ILD layer along an upper profile of a source/drain region, and then form a source/drain contact feature having a concave bottom profile with increased contact area.
Claims20
A semiconductor device, comprising:
- a fin structure along a first direction;
- a first and a second gate structures along a second direction over the fin structure, wherein the second direction is perpendicular to the first direction;
- a source/drain region between the first and second gate structures, wherein the source/drain region has a convex upper profile along the second direction, and the convex upper profile includes a top surface, a first side surface and a second side surface, and the first side surface and second side surface slope from the top surface;
- and
- a source/drain contact feature having first and second proximity regions facing the first side surface and second side surfaces of the source/drain region, wherein the source/drain contact feature has a concave bottom profile matching the convex upper profile of the source/drain region.
2 more elements
A semiconductor device, comprising:
- a first channel region extending along a first direction;
- first and second gate structures along a second direction over the first channel region, wherein the second direction is perpendicular to the first direction;
- a first source/drain region disposed between the first and second gate structures and connected to the first channel region, wherein a profile of the first source/drain region along the second direction includes a top surface and two sloping side surfaces;
- a CESL (contact etch stop layer) layer disposed over the source/drain region;
- an ILD (interlayer dielectric) layer disposed over the CESL layer;
- a silicide layer on the top surface and portions of the side surfaces of the first source and drain region;
- and
- a conductive feature over the silicide layer and through the ILD layer.
5 more elements
A semiconductor device, comprising:
- a first channel region extending along a first direction;
- a first gate structure along a second direction over the first channel region, wherein the second direction is perpendicular to the first direction;
- a first source/drain region connected to the first channel region;
- a CESL (contact etch stop layer) layer disposed over the source/drain region;
- an ILD (interlayer dielectric) layer disposed over the CESL layer;
- a silicide layer formed on the first source and drain region;
- and
- a source/drain feature over the silicide layer and through the ILD layer, wherein the source/drain contact feature has a concave bottom profile enclosing a top portion of the first source/drain region.
5 more elements
Dependencies are inferred from the claim text.