Treatment of electrodes of mim capacitors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Hung Tsai, Cheng-Hao Hou, Da-Yuan Lee, Chi On Chui
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Abstract
A method includes forming a first electrode, performing a first treatment process on a first oxide layer over the first electrode, wherein the first treatment process is performed using a first process gas comprising ammonia, depositing a high-k dielectric layer over the first oxide layer, forming a second electrode over the high-k dielectric layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.
Claims20
A method comprising:
- forming a first electrode;
- forming a first capacitor insulator over the first electrode, the first capacitor insulator comprising:
- a first titanium oxide layer comprising nitrogen therein;
- a dielectric layer over the first titanium oxide layer;
- and
- a second titanium oxide layer over the dielectric layer, wherein the first titanium oxide layer has a higher nitrogen atomic percentage than the second titanium oxide layer;
- forming a second electrode over the second titanium oxide layer;
- forming a first contact plug electrically connecting to the first electrode;
- and
- forming a second contact plug electrically connecting to the second electrode.
A method comprising:
- forming a capacitor comprising:
- forming a first capacitor electrode on a wafer, wherein the first capacitor electrode comprises a metal nitride;
- forming an oxide layer over the first capacitor electrode;
- performing a first treatment process on the oxide layer using a first nitrogen-containing gas;
- performing a second treatment process on the oxide layer using a second nitrogen-containing gas different from the first nitrogen-containing gas, wherein the first treatment process and the second treatment process convert the oxide layer as a nitrogen-rich metal oxide layer;
- forming a dielectric layer over the nitrogen-rich metal oxide layer;
- and
- forming a second capacitor electrode over the dielectric layer.
A method comprising:
- depositing a titanium nitride layer;
- patterning the titanium nitride layer to form a first electrode, wherein a first titanium oxide layer is formed at a top surface of the titanium nitride layer;
- preforming a plurality of treatment processes on the first titanium oxide layer to form a nitrogen-rich titanium oxide layer;
- forming a high-k dielectric layer over the nitrogen-rich titanium oxide layer;
- depositing a second titanium oxide layer over the high-k dielectric layer;
- and
- forming a second capacitor electrode over the second titanium oxide layer.
Dependencies are inferred from the claim text.