Power switch circuit, ic structure of power switch circuit, and method of forming ic structure

An integrated circuit device, comprising:

• an integrated circuit module;
• and
• a first field-effect transistor and a second field-effect transistor, the second field-effect transistor being a complementary field-effect transistor of the first field-effect transistor,
• wherein the first field-effect transistor comprises a first connecting terminal coupled to a reference voltage, and a second connecting terminal coupled to a first node,
• wherein the second field-effect transistor comprises a first connecting terminal coupled to the first node, and a second connecting terminal coupled to a terminal of integrated circuit module,
• wherein the first field-effect transistor is controlled by a first control signal to selectively set the terminal of integrated circuit module to a voltage level of the reference voltage,
• wherein the first field-effect transistor and the second field-effect transistor are arranged in a CFET (complementary field-effect transistor) structure in which the first field-effect transistor is vertically stacked on the second field-effect transistor,
• wherein:
• the first field-effect transistor comprises a first first-type transistor and a second first-type transistor arranged in parallel;
• the first first-type transistor and the second first-type transistor share a first common source/drain region;
• the second field-effect transistor comprises a first second-type transistor and a second second-type transistor arranged in parallel;
• the first second-type transistor and the second second-type transistor share a second common source/drain region;
• and
• the first first-type transistor and the second first-type transistor align with the first second-type transistor and the second second-type transistor in a vertical direction, respectively.

An integrated circuit device, comprising:

• an integrated circuit module;
• a first field-effect transistor, coupled between a reference voltage and a first node;
• and
• a second field-effect transistor, coupled between the first node and a terminal of the integrated circuit module, wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor;
• wherein a control terminal of the second field-effect transistor is connected to a first connecting terminal of the second field-effect transistor, and the first field-effect transistor is controlled by a control signal to selectively set the terminal of the integrated circuit module to a difference between the reference voltage and a threshold voltage of the second field-effect transistor,
• wherein:
• the first field-effect transistor and the second field-effect transistor are arranged in a CFET (complementary field-effect transistor) structure in which the first field-effect transistor is vertically stacked on the second field-effect transistor;
• the first field-effect transistor comprises a first first-type transistor and a second first-type transistor arranged in parallel;
• the first first-type transistor and the second first-type transistor share a first common source/drain region;
• the second field-effect transistor comprises a first second-type transistor and a second second-type transistor arranged in parallel;
• the first second-type transistor and the second second-type transistor share a second common source/drain region;
• and
• the first first-type transistor and the second first-type transistor align with the first second-type transistor and the second second-type transistor in a vertical direction, respectively.